Education
Ph.D., University of Sydney, Australia, 1991
Research Interests
Gallium Nitride and Silicon Carbide devices and integrated circuits, Wide bandgap sensors, MEMS devices, Ferroelectric devices.
Editorial Services
• IEEE Transactions on Power Electronics (Associate Editor, 2002 – 2019)
• Recent Patents on Electrical Engineering (Editorial Board, 2007 – 2012)
• International Journal of Power Electronics (Associate Editor, 2008 – 2018)
• International Journal on Sustainable Materials and Structural Systems (Editorial Board, 2010 – present)
Representative Publications
[1] H Huang, H Zhang, Y Cao, Y Liu, K Ma, K Liu, Y C Liang, “High-temperature three-dimensional GaN-based hall sensors for magnetic field detection”, Journal of Physics D: Applied Physics, November 2020, DOI: https: 10.1088/1361-6463/abc4ab (United States).
[2] L Xia, K Ren, C-F Huang and Y C Liang, “Fin-shaped AlGaN/GaN high electron mobility magnetoresistive sensor device”, Applied Physics Letters, Vol. 118, No. 16, April 2021, DOI: 10.1063/5.0046684 (United States).
[3] Y Pu and Y C Liang, “High-gain high-sensitivity AlGaN/GaN ultraviolet photodetector with effective mechanism for photocurrent collection”, Applied Physics Letters, Vol. 121, No. 6, 062105, August 2022 DOI: 10.1063/5.0095835 (United States).
[4] K Ma, H Huang, N Ding, N Sun, J Dai, Z Sun, H Zhang, P Tao, Y Liu, K Qin and Y C Liang, “Demonstration of high-performance GaN-based hall sensors on Si substrate by simulation and experiment verification”, IEEE Transactions on Electron Devices, Volume: 69, Issue: 12, December 2022, pp. 7019 – 7024, DOI: 10.1109/TED.2022.3216538 (United States).
[5] Y Pu and Y C Liang, “100 mV ultra-low bias AlGaN/GaN photodetector based on fin-shaped capacitor configuration for future integrated optoelectronics”, ACS Photonics, 10, 5, pp. 1293–1301, DOI: 10.1021/acsphotonics.2c01878, April 2023 (United States).
[6] L Xia and Y C Liang, “Modeling and performance optimization on GaN sectorial split cathode magnetic sensors”, IEEE Sensors Journal, Vol. 23, No. 21, DOI: 10.1109/JSEN.2023.3318353, pp. 25874 – 25881, November 2023.
[7] Y Pu and Y C Liang, “ITO AlGaN/GaN ultraviolet broadband photodetector with exceeding responsivity beyond the ITO transmittance limitation”, IEEE Electron Device Letters, DOI: 10.1109/LED.2023.3348972, 2024.
[8] L Xia and Y C Liang, “High-sensitivity AlGaN/GaN magnetoresistive sensor device by profiling the AlGaN layer”, 2021 International Conference on IC Design and Technology (ICICDT), Fraunhofer IPMS in Dresden, Germany, September 15 - 17, 2021. DOI: 10.1109/ICICDT51558.2021.9626529.
[9] Y Pu and Y C Liang, “High-gain high-sensibility AlGaN/GaN ultraviolet photodetector with effective photocurrent collection plates”, WOCSDICE EXMATEC 2022, Ponta Delgada (São Miguel island - Azores), Portugal, 3-6 May 2022, pp. OP68-69.
[10] Y Pu and Y C Liang, “Ultra-low voltage fin-shaped AlGaN/GaN ultraviolet photodetector with enhanced frequency responses”, 2022 International Conference on Solid State Devices and Materials (SSDM2022), 26 – 29 September 2022 at Makuhari Messe International Conference Hall, Chiba, Japan, pp. 19 – 20.
[11] Y Pu and Y C Liang, “First demonstration of self-powered AlGaN/GaN UV photodetector enabled by non-planar Schottky depletion”, The 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2023), Kyoto, Japan, 25 – 29 June 2023, pp. 429 – 432.
[12] L Xia and Y C Liang, “AlGaN/GaN split-electrode sectorial sensor array for ultra-low magnetic field detection at 8 µT” , The 22nd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2023), Kyoto, Japan, 25 – 29 June 2023.
[13] Y Pu and Y C Liang, “Non-planar ITO/AlGaN/GaN ultraviolet photodetector with broadband spectrum and high responsivity”, The 14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, 12 – 17 November 2023.
NUS Webpage
https://cde.nus.edu.sg/ece/staff/yung-c-liang/
